Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SI6473DQ-T1-GE3
MOSFET P-CH 20V 6.2A 8-TSSOP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET P-CH 20V 6.2A 8-TSSOP
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 35A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -50°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.5mOhm @ 15A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 3.8W (Ta), 52W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® 1212-8
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 105nC @ 8V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 8V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3810pF @ 4V