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Vishay / Siliconix SI7112DN-T1-E3
MOSFET N-CH 30V 11.3A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 2825
Product Details
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1mOhm @ 20A, 10V
- Series
- TrenchFET® Gen IV
- Power Dissipation (Max)
- 6.25W (Ta), 100W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® SO-8
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 194nC @ 10V
- Vgs (Max)
- +20V, -16V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 8445pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 62.5A (Ta), 100A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8