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Vishay / Siliconix SI7115DN-T1-GE3
MOSFET P-CH 150V 8.9A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 2.02
- Stock
- 15273
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 470mOhm @ 5.75A, 10V
- Series
- QFET®
- Power Dissipation (Max)
- 3.13W (Ta), 120W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- D²PAK (TO-263AB)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 40nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1200pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11.5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 5V @ 250µA