Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SI7119DN-T1-GE3
MOSFET P-CH 200V 3.8A 1212-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 162217
- Description
- MOSFET P-CH 200V 3.8A 1212-8
Product Details
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TA)
- Rds On (Max) @ Id, Vgs
- 34mOhm @ 6.1A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2W (Ta), 4.2W (Tc)
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 33nC @ 10V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 30V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 1000pF @ 15V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Active
- Mounting Type
- Surface Mount