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Vishay / Siliconix SI7120ADN-T1-GE3
MOSFET N-CH 60V 6A 1212-8 PPAK
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 1281
- Description
- MOSFET N-CH 60V 6A 1212-8 PPAK
Product Details
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 13nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1980pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 24A (Ta), 100A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 1.8V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.5mOhm @ 20A, 10V
- Series
- NexFET™
- Power Dissipation (Max)
- 3.2W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 8-VSONP (5x6)