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Vishay / Siliconix SI7121ADN-T1-GE3

MOSFET P-CH 30V D-S PPAK 1212-8

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
7532
Description
MOSFET P-CH 30V D-S PPAK 1212-8

Product Details

FET Feature
-
Current - Continuous Drain (Id) @ 25°C
380mA (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
6Ohm @ 190mA, 10V
Series
QFET®
Power Dissipation (Max)
890mW (Ta), 2.08W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-92-3
Packaging
Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs
6.4nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
500V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
195pF @ 25V