Vishay / Siliconix SI7309DN-T1-GE3

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2960pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

86A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

4V @ 30µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

5.2mOhm @ 86A, 10V

Series

Automotive, AEC-Q101, OptiMOS™

Power Dissipation (Max)

65W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO252-3-313

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V