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Vishay / Siliconix SI7790DP-T1-GE3
MOSFET N-CH 40V 50A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- Series
- STripFET™ II
- Rds On (Max) @ Id, Vgs
- 165mOhm @ 8.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 110W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- D2PAK
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 29.5nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 250V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1000pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number
- STB18N
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)