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Vishay / Siliconix SI7960DP-T1-GE3
MOSFET 2N-CH 60V 6.2A PPAK SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
Product Details
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- 400pF @ 10V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 4.5A
- Power - Max
- 6.5W
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SC-70-6 Dual
- Base Part Number
- SIA914
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 53mOhm @ 3.7A, 4.5V
- Series
- TrenchFET®
- Supplier Device Package
- PowerPAK® SC-70-6 Dual
- FET Type
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs
- 11.5nC @ 8V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 20V