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Vishay / Siliconix SI8481DB-T1-E1

MOSFET P-CH 20V 9.7A 4-MICROFOOT

Manufacturer
Vishay / Siliconix
Datasheet
Price
0.2
Stock
10000
Description
MOSFET P-CH 20V 9.7A 4-MICROFOOT

Product Details

Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
128pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Part Status
Not For New Designs
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Vgs(th) (Max) @ Id
-
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
125mOhm @ 1A, 4.5V
Series
-
Power Dissipation (Max)
800mW (Ta)
FET Type
N-Channel
Supplier Device Package
6-SCH
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
1.8nC @ 4.5V
Vgs (Max)
±12V
Drain to Source Voltage (Vdss)
20V