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Vishay / Siliconix SI8810EDB-T2-E1
MOSFET N-CH 20V 2.1A MICROFOOT
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 5869
- Description
- MOSFET N-CH 20V 2.1A MICROFOOT
Product Details
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1050pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4.2A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4V
- Mounting Type
- Surface Mount
- Package / Case
- 6-SMD, Flat Leads
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 28mOhm @ 3A, 4V
- Series
- U-MOSIII
- Power Dissipation (Max)
- 500mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- UF6
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 16.8nC @ 4V