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Vishay / Siliconix SI8902AEDB-T2-E1
N-CHANNEL 24-V (D-S) MOSFET
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.29
- Stock
- 100
Product Details
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 30V
- FET Feature
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds
- 190pF @ 15V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 3.5A
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Base Part Number
- IRF9956PBF
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 2.2A, 10V
- Series
- HEXFET®
- Supplier Device Package
- 8-SO
- FET Type
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs
- 14nC @ 10V