Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SI9410BDY-T1-E3
MOSFET N-CH 30V 6.2A 8SOIC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 30V 6.2A 8SOIC
Product Details
- Power Dissipation (Max)
- 219W (Tc)
- Series
- CoolMOS™
- Supplier Device Package
- TO-220 [K]
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 88nC @ 10V
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2267pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 30A (Tc)
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 3.5V @ 960µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 125mOhm @ 14.5A, 10V