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Vishay / Siliconix SIA427ADJ-T1-GE3
MOSFET P-CH 8V 12A 6SC-70
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 13375
- Description
- MOSFET P-CH 8V 12A 6SC-70
Product Details
- Rds On (Max) @ Id, Vgs
- 35mOhm @ 4.8A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2.4W (Ta), 13W (Tc)
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 44nC @ 8V
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 20V
- Vgs (Max)
- ±8V
- Current - Continuous Drain (Id) @ 25°C
- 9A (Tc)
- Technology
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SC-75-6L
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)