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Vishay / Siliconix SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A SC70-6
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET P-CH 30V 12A SC70-6
Product Details
- Series
- SIPMOS®
- Power Dissipation (Max)
- 500mW (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PG-SC-59
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 7nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 165pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 360mA (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 1V @ 170µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.8Ohm @ 360mA, 10V