Images are for reference only. See Product Specifications for product details

Vishay / Siliconix SIA483DJ-T1-GE3

MOSFET P-CH 30V 12A SC70-6

Manufacturer
Vishay / Siliconix
Datasheet
Price
0
Stock
15163
Description
MOSFET P-CH 30V 12A SC70-6

Product Details

Vgs (Max)
±6V
Drain to Source Voltage (Vdss)
12V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2700pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Vgs(th) (Max) @ Id
1V @ 1mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
12mOhm @ 4A, 4.5V
Series
U-MOSVI
Power Dissipation (Max)
1.25W (Ta)
FET Type
P-Channel
Supplier Device Package
6-UDFNB (2x2)
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
37.6nC @ 4.5V