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Vishay / Siliconix SIA485DJ-T1-GE3
P-CHANNEL 150-V (D-S) MOSFET
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 10025
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 590pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 2.7V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 43mOhm @ 5A, 10V
- Series
- Automotive, AEC-Q101
- Power Dissipation (Max)
- 15W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DFN2020MD-6
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 18nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V