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Vishay / Siliconix SIA850DJ-T1-GE3
MOSFET N-CH 190V 0.95A SC70-6
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET N-CH 190V 0.95A SC70-6
Product Details
- Series
- SIPMOS®
- Power Dissipation (Max)
- 1.8W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- PG-SOT223-4
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 340pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.9A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Vgs(th) (Max) @ Id
- 4V @ 20µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 120mOhm @ 2.9A, 10V