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Vishay / Siliconix SIB417DK-T1-GE3
MOSFET P-CH 8V 9A SC75-6
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0
- Stock
- 100
- Description
- MOSFET P-CH 8V 9A SC75-6
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 11.82nC @ 5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 12V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 562pF @ 6V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SC-75-6L
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 5.2A, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 2.45W (Ta), 13.1W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® SC-75-6L Single