Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SIDR638DP-T1-GE3
MOSFET N-CH 40V 100A SO-8
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 2.04
- Stock
- 100
- Description
- MOSFET N-CH 40V 100A SO-8
Product Details
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- -
- Series
- -
- Power Dissipation (Max)
- -
- FET Type
- N-Channel
- Supplier Device Package
- LFPAK56, Power-SO8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 80nC @ 10V
- Vgs (Max)
- -
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4.852nF @ 10V
- FET Feature
- Schottky Diode (Body)
- Current - Continuous Drain (Id) @ 25°C
- 300A
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- -
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669