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Vishay / Siliconix SIE808DF-T1-E3
MOSFET N-CH 20V 60A 10-POLARPAK
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 20V 60A 10-POLARPAK
Product Details
- FET Type
- P-Channel
- Supplier Device Package
- PowerPAK® SO-8
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 135nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 150V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 3A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 90mOhm @ 5.2A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.9W (Ta)