Vishay / Siliconix SIE862DF-T1-GE3

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1Ohm @ 4A, 10V

Series

-

Power Dissipation (Max)

40W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220 Full Pack

Packaging

Tape & Reel (TR)

Drain to Source Voltage (Vdss)

500V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

873pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Active

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

5V @ 250µA