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Vishay / Siliconix SIHA120N60E-GE3
MOSFET N-CHAN E SERIES 600V THIN
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 5
- Stock
- 23
- Description
- MOSFET N-CHAN E SERIES 600V THIN
Product Details
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- STripFET™
- Rds On (Max) @ Id, Vgs
- 3.7mOhm @ 30A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 312W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-220-3
- Vgs (Max)
- ±18V
- Gate Charge (Qg) (Max) @ Vgs
- 80nC @ 5V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 55V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 6200pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Package / Case
- TO-220-3
- Base Part Number
- STP190
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA