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Vishay / Siliconix SIHA24N65EF-E3
MOSFET N-CHANNEL 650V 24A TO220
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 5.58
- Stock
- 982
- Description
- MOSFET N-CHANNEL 650V 24A TO220
Product Details
- Rds On (Max) @ Id, Vgs
- 110mOhm @ 12.7A, 10V
- Series
- CoolMOS™
- Power Dissipation (Max)
- 277.8W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO220-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 118nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 700V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3240pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 31.2A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4.5V @ 1.3mA
- Operating Temperature
- -55°C ~ 150°C (TJ)