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Vishay / Siliconix SIHB065N60E-GE3
MOSFET E SERIES 600V D2PAK (TO-2
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 6.52
- Stock
- 1000
- Description
- MOSFET E SERIES 600V D2PAK (TO-2
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO247-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 51nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2103pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 25A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4.5V @ 570µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 90mOhm @ 11.4A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 125W (Tc)