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Vishay / Siliconix SIHB11N80E-GE3
MOSFET N-CH 800V D2PAK TO-263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 1.92
- Stock
- 100
- Description
- MOSFET N-CH 800V D2PAK TO-263
Product Details
- Series
- CoolMOS™ CFD2
- Supplier Device Package
- PG-TO247-3-41
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 31.5nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 870pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8.7A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 4.5V @ 300µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 420mOhm @ 3.4A, 10V
- Power Dissipation (Max)
- 83.3W (Tc)