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Vishay / Siliconix SIHB120N60E-GE3
MOSFET N-CHAN 650V D2PAK (TO-263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CHAN 650V D2PAK (TO-263
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1562pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 25A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 120mOhm @ 12A, 10V
- Power Dissipation (Max)
- 34W (Tc)
- Series
- E
- Supplier Device Package
- TO-220 Full Pack
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 45nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V