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Vishay / Siliconix SIHB12N60ET1-GE3
MOSFET N-CH 600V 12A TO263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 1.98
- Stock
- 800
Product Details
- Series
- QFET®
- Power Dissipation (Max)
- 204W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-3PN
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 110nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2220pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 32A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 82mOhm @ 16A, 10V