Vishay / Siliconix SIHB12N60ET5-GE3

Product Details

Package / Case

TO-220-3

Base Part Number

STP9N

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

150°C (TJ)

Series

MDmesh™ II

Rds On (Max) @ Id, Vgs

790mOhm @ 2.5A, 10V

FET Type

N-Channel

Power Dissipation (Max)

60W (Tc)

Packaging

Tube

Supplier Device Package

TO-220

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

365pF @ 50V

Part Status

Obsolete

Current - Continuous Drain (Id) @ 25°C

5.6A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V