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Vishay / Siliconix SIHB15N65E-GE3
MOSFET N-CH 650V 15A TO263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 650V 15A TO263
Product Details
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 3.9V @ 500µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 380mOhm @ 7A, 10V
- Series
- CoolMOS™
- Power Dissipation (Max)
- 33W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO220-3-31 Full Pack
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 60nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1200pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V