Images are for reference only. See Product Specifications for product details
Vishay / Siliconix SIHB20N50E-GE3
MOSFET N-CH 500V 19A TO-263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 3.13
- Stock
- 1000
- Description
- MOSFET N-CH 500V 19A TO-263
Product Details
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 23nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1400pF @ 300V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11.5A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 570µA
- Operating Temperature
- 150°C
- Rds On (Max) @ Id, Vgs
- 450mOhm @ 5.8A, 10V
- Series
- DTMOSIV
- Power Dissipation (Max)
- 165W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220