Vishay / Siliconix SIHB22N60AE-GE3

Product Details

Vgs(th) (Max) @ Id

3.9V @ 150µA

Operating Temperature

-55°C ~ 175°C (TJ)

Series

HEXFET®

Rds On (Max) @ Id, Vgs

1.3mOhm @ 100A, 10V

FET Type

N-Channel

Power Dissipation (Max)

231W (Tc)

Packaging

Tube

Supplier Device Package

D2PAK-7

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

7437pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

240A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

Base Part Number

IRFS8407