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Vishay / Siliconix SIHB22N60E-GE3

MOSFET N-CH 600V 21A D2PAK

Manufacturer
Vishay / Siliconix
Datasheet
Price
3.92
Stock
6945
Description
MOSFET N-CH 600V 21A D2PAK

Product Details

Package / Case
TO-220-3
Base Part Number
STP8N
Vgs(th) (Max) @ Id
4.5V @ 100µA
Operating Temperature
-55°C ~ 150°C (TJ)
Series
SuperMESH™
Rds On (Max) @ Id, Vgs
1.85Ohm @ 3.15A, 10V
FET Type
N-Channel
Power Dissipation (Max)
160W (Tc)
Packaging
Tube
Supplier Device Package
TO-220AB
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
102nC @ 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
2180pF @ 25V
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
Mounting Type
Through Hole
Drive Voltage (Max Rds On, Min Rds On)
10V