Vishay / Siliconix SIHB22N60ET5-GE3

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1820pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

13.4A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

5V @ 750µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

330mOhm @ 9.4A, 10V

Series

CoolMOS™

Power Dissipation (Max)

34W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO220-FP

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V