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Vishay / Siliconix SIHB24N65E-GE3
MOSFET N-CH 650V 24A D2PAK
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 5.64
- Stock
- 992
- Description
- MOSFET N-CH 650V 24A D2PAK
Product Details
- Series
- HEXFET®
- Power Dissipation (Max)
- 375W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-262
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 300nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 8970pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 195A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.5mOhm @ 170A, 10V