Vishay / Siliconix SIHB30N60E-GE3

Product Details

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 100V

Part Status

Obsolete

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-262-3 Full Pack, I²Pak

Base Part Number

STI34N

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

MDmesh™ V

Rds On (Max) @ Id, Vgs

110mOhm @ 14A, 10V

FET Type

N-Channel

Power Dissipation (Max)

190W (Tc)

Packaging

Tube

Supplier Device Package

I2PAKFP (TO-281)

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

62.5nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V