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Vishay / Siliconix SIHB33N60ET1-GE3
MOSFET N-CH 600V 33A TO263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 3.69
- Stock
- 100
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 72mOhm @ 24A, 10V
- Series
- Automotive, AEC-Q101, SuperFET® III, FRFET®
- Power Dissipation (Max)
- 312W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D²PAK-3 (TO-263-3)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 82nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 330pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 44A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4.5V @ 1mA