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Vishay / Siliconix SIHB35N60E-GE3
MOSFET N-CH 600V 32A D2PAK TO263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 6.1
- Stock
- 860
- Description
- MOSFET N-CH 600V 32A D2PAK TO263
Product Details
- Series
- MDmesh™ K5
- Rds On (Max) @ Id, Vgs
- 2Ohm @ 2.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 130W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-220
- Vgs (Max)
- -
- Gate Charge (Qg) (Max) @ Vgs
- 13.7nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 1200V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 505pF @ 100V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 6A (Tc)
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-220-3
- Base Part Number
- STP8N
- Vgs(th) (Max) @ Id
- 5V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)