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Vishay / Siliconix SIHB6N65E-GE3
MOSFET N-CH 650V 7A D2PAK
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 1.83
- Stock
- 998
- Description
- MOSFET N-CH 650V 7A D2PAK
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.15mOhm @ 40A, 10V
- Series
- NexFET™
- Power Dissipation (Max)
- 3.2W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 8-VSON-CLIP (5x6)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 29nC @ 4.5V
- Vgs (Max)
- +16V, -12V
- Drain to Source Voltage (Vdss)
- 25V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4100pF @ 12.5V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 1.9V @ 250µA