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Vishay / Siliconix SIHD240N60E-GE3
MOSFET N-CHAN 600V DPAK TO-252
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 2.43
- Stock
- 2926
Product Details
- Rds On (Max) @ Id, Vgs
- 105mOhm @ 10.5A, 10V
- Series
- CoolMOS™ P7
- Power Dissipation (Max)
- 137W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-VSON-4
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 45nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1952pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 33A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 4-PowerTSFN
- Vgs(th) (Max) @ Id
- 4V @ 530µA
- Operating Temperature
- -40°C ~ 150°C (TJ)