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Vishay / Siliconix SIHD2N80E-GE3
MOSFET N-CH 800V 2.8A DPAK
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 1.35
- Stock
- 1401
- Description
- MOSFET N-CH 800V 2.8A DPAK
Product Details
- Operating Temperature
- 150°C (TJ)
- Series
- STripFET™
- Rds On (Max) @ Id, Vgs
- 7.3mOhm @ 10.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 5.2W (Ta)
- Packaging
- Digi-Reel®
- Supplier Device Package
- PolarPak®
- Vgs (Max)
- ±16V
- Gate Charge (Qg) (Max) @ Vgs
- 9.5nC @ 4.5V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 25V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1425pF @ 25V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 21A (Ta)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- PolarPak®
- Base Part Number
- STK8
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA