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Vishay / Siliconix SIHD6N65E-GE3
MOSFET N-CH 650V 7A TO252
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 650V 7A TO252
Product Details
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 49nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1920pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 24A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 4-PowerTSFN
- Vgs(th) (Max) @ Id
- 4.5V @ 590µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 125mOhm @ 12A, 10V
- Series
- SuperFET® III
- Power Dissipation (Max)
- 181W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 4-PQFN (8x8)