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Vishay / Siliconix SIHD6N65ET5-GE3
MOSFET N-CH 650V 7A TO252AA
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 650V 7A TO252AA
Product Details
- Rds On (Max) @ Id, Vgs
- 1.7mOhm @ 28A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 2.1W (Ta), 42W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DIRECTFET™ S3C
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 4.5V
- Vgs (Max)
- ±16V
- Drain to Source Voltage (Vdss)
- 25V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2510pF @ 13V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 28A (Ta), 125A (Tc)
- Part Status
- Last Time Buy
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET™ Isometric S3C
- Vgs(th) (Max) @ Id
- 2.1V @ 50µA
- Operating Temperature
- -40°C ~ 150°C (TJ)