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Vishay / Siliconix SIHD7N60E-GE3
MOSFET N-CH 600V 7A TO-252
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 1.91
- Stock
- 1355
- Description
- MOSFET N-CH 600V 7A TO-252
Product Details
- Rds On (Max) @ Id, Vgs
- 1.2Ohm @ 2.4A, 10V
- Series
- -
- Power Dissipation (Max)
- 43W (Tc)
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 8.7nC @ 10V
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 100V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 200pF @ 25V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)