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Vishay / Siliconix SIHF12N60E-GE3
MOSFET N-CH 600V 12A TO220 FULLP
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 2.77
- Stock
- 958
- Description
- MOSFET N-CH 600V 12A TO220 FULLP
Product Details
- Rds On (Max) @ Id, Vgs
- 5mOhm @ 50A, 10V
- Series
- TrenchT2™
- Power Dissipation (Max)
- 250W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-263 (IXTA)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 79nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4640pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 160A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)