Vishay / Siliconix SIHF28N60EF-GE3

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4897pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

69A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

4V @ 270µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

22mOhm @ 41A, 10V

Series

StrongIRFET™

Power Dissipation (Max)

313W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-247AC

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

250V