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Vishay / Siliconix SIHF640S-GE3
MOSFET N-CH 200V D2PAK TO-263
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CH 200V D2PAK TO-263
Product Details
- Series
- -
- Power Dissipation (Max)
- 7.3W (Ta), 104W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-DFN (5x6)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 115nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5578pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 41A (Ta), 85A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerSMD, Flat Leads
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.4mOhm @ 20A, 10V