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Vishay / Siliconix SIHG018N60E-GE3
MOSFET N-CHAN 650V TO247AC
- Manufacturer
- Vishay / Siliconix
- Datasheet
- Price
- 0.2
- Stock
- 10000
- Description
- MOSFET N-CHAN 650V TO247AC
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 26A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 18V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-4
- Vgs(th) (Max) @ Id
- 5.7V @ 3.7mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 117mOhm @ 8.5A, 18V
- Power Dissipation (Max)
- 115W (Tc)
- Series
- CoolSiC™
- Supplier Device Package
- PG-TO247-4-1
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 21nC @ 18V
- Vgs (Max)
- +23V, -7V
- Drain to Source Voltage (Vdss)
- 1.2kV
- Technology
- SiC (Silicon Carbide Junction Transistor)
- Input Capacitance (Ciss) (Max) @ Vds
- 707pF @ 800V