Vishay / Siliconix SIHG14N50D-E3

Product Details

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1312pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

3.9V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

150mOhm @ 14.5A, 10V

Series

aMOS™

Power Dissipation (Max)

357W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

26.6nC @ 10V