Vishay / Siliconix SIHG15N60E-GE3

Product Details

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

2.15V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

1.7mOhm @ 25A, 10V

Series

-

Power Dissipation (Max)

306W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220AB

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

212nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

12493pF @ 12V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V